Chembox new
ImageFile = Isobutylgermane-2D-skeletal.png ImageFile1 = Isobutylgermane-3D-balls.png ImageFile2 = Isobutylgermane-3D-vdW.png IUPACName = isobutylgermane
OtherNames = Isobutylgermanium trihydride
Section1 = Chembox Identifiers
CASNo = 768403-89-0

Section2 = Chembox Properties
Formula = C4H12Ge
MolarMass = 132.78 g mol−1
Appearance = Clear Colorless Liquid
Density = 0.96 g/mL
Solubility = Insoluble in water
MeltingPt = <-78 °C
BoilingPt = 66 °C

Section8 = Chembox Other
OtherCpds = GeH4

Isobutylgermane, (IBGe), (CH3)2CHCH2GeH3, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas. IBGe is useful in the deposition of pure Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications.


IBGe is a non-pyrophoric liquid source for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of semiconductors. It possesses very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C). [ Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE] ; D.V. Shenai et al, Rohm and Haas Electronic Materials; "Presentation at ICMOVPE-XIII, Miyazaki, Japan, June 1, 2006", and publication in "Journal of Crystal Growth" (2007)] , coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers such as Ge, SiGe, SiGeC, strained silicon, GeSb and GeSbTe.


Rohm and Haas, IMEM and CNRS have developed a novel process to grow germanium films on germanium at low temperatures in a MOVPE reactor using isobutylgermane. The research targets Ge/III-V hetero devices. [!&_cdi=5302&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=b727a26cf1d2921d65096fc1f93658bb Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films] ; Shenai-Khatkhate et al, Rohm and Haas Electronic Materials; "Presentation at ACCGE-16, Montana, USA, July 11, 2005", and publication in "Journal of Crystal Growth" (2006)] [ Rohm and Haas Electronic Materials LLC] , Metalorganics and Germanium Sources for MOVPE.] It has been demonstrated that the growth of high quality germanium films at temperatures as low as 500 °C can be achieved [ MOVPE growth of homoepitaxial germanium] , M. Bosi et al. publication in "Journal of Crystal Growth" (2008)] . The low growth temperature and the new precursor are expected to eliminate a memory effect of germanium in the III-V material.


Further reading

* [ IBGe] : Brief description from National Compound Semiconductor Roadmap.

* [ Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si] : Article in French from LPN-CNRS, France.

* [!&_cdi=5302&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=b727a26cf1d2921d65096fc1f93658bb Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films] ; "Journal of Crystal Growth", January 25, 2006.

* [ Ge Precursors for Strained Si and Compound Semiconductors] ; "Semiconductor International", April 1, 2006.

* [ 摘要 随着Ge重要性的提高,需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。] ; "Semiconductor International Chinese Edition", June 1, 2006.
* [ 歪みSiと化合物半導体向けの Geプリカーサ] ; "Semiconductor International Japanese Edition", August 1, 2006.

* [ Rohm and Haas Electronic Materials Devises Germanium Film Growth Process] ; "CompoundSemi News", September 23, 2005.

* [ High Purity Germanium Film] ; "III-Vs Review", September 23, 2005.

* [ Development of New Germanium Precursors for SiGe Epitaxy] ; Deo Shenai and Egbert Woelk, "Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006".

External links

* [ Rohm and Haas Electronic Materials LLC]

* [ Laboratoire de Photonique et de Nanostructures, LPN CNRS]

* [ IMEM-CNR Institute]

Wikimedia Foundation. 2010.

Look at other dictionaries:

  • Germanium — (pronEng|dʒɚˈmeɪniəm) is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard, silver white metalloid in the carbon group, chemically similar to its group neighbors tin and silicon. Germanium has five naturally… …   Wikipedia

  • Organogermanium compound — Organogermanium compounds are organometallic compounds containing a carbon to germanium or hydrogen to germanium chemical bond. Organogermanium chemistry is the corresponding chemical science.[1] Germanium shares group 14 in the periodic table… …   Wikipedia

  • Silicon-germanium — SiGe (IPA|ˈsɪɡɪː, IPA|ˈsaɪdʒɪ), or silicon germanium, is a general term for the alloy Si1 xGex which consists of any molar ratio of silicon and germanium. It is commonly used as a semiconductor material in integrated circuits (ICs) for… …   Wikipedia

  • Strained silicon — is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiliconGermanium). As the atoms in the… …   Wikipedia

  • Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …   Wikipedia

  • Germane — Germanium tetrahydride …   Wikipedia

  • GeSbTe — GeSbTe, or Germanium Antimony Tellurium, also known as GST, is a phase change material from the group of chalcogenide glasses, used in rewritable optical discs and phase change memory applications. Its recrystallization time is down to 20… …   Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”

We are using cookies for the best presentation of our site. Continuing to use this site, you agree with this.