Copper indium gallium selenide
Copper indium gallium selenide
CIGS unit cell. Red = Cu, yellow = Se, blue = In/Ga
Identifiers CAS number (CuInSe2) Properties Molecular formula CuInxGa(1-x)Se2 Density ~5.7 g/cm3 Melting point
Band gap 1.7–1.0 eV (x=0–1) Structure Crystal structure tetragonal, Pearson symbol tI16  Space group I42d Lattice constant a = 0.56–0.58 nm (x=0–1), c = 1.10–1.15 nm (x=0–1) Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox references
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuInxGa(1-x)Se2 where the value of x can vary from 1 (pure copper indium selenide) to 0 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide). It is used as light absorber material for thin-film solar cells.
CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from to 1045 °C for x=0 to 805 °C for x=1.
- ^ a b c d Tinoco, T.; Rincón, C.; Quintero, M.; Pérez, G. Sánchez (1991). "Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys". Physica Status Solidi (a) 124 (2): 427. doi:10.1002/pssa.2211240206.
- ^ "DOE Solar Energy Technologies Program Peer Review". U.S. department of energy 2009. http://www1.eere.energy.gov/solar/review_meeting/pdfs/prm2009_contreras_cigs.pdf. Retrieved 10 February 2011.
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